FIB (Focused Ion Beam)

Definition: FIB (Focused Ion Beam) is a microscopic technique in which a focused ion beam – usually gallium ions – is used for targeted material removal or deposition. It serves for high-precision sample preparation and microstructure investigation in the sub-micrometre to nanometre range. FIB is frequently combined with a scanning electron microscope (FIB-SEM).

Practical relevance: FIB enables the creation of local cross-sections, TEM lamellae or 3D tomographies through serial removal. Applications are found in failure analysis, semiconductor technology, coating evaluation and materials research. Beam current, accelerating voltage and the minimisation of ion implantation or beam damage are decisive factors.

Decision-making perspectives:

• Technical decision-makers: Investigation of local defects, interfaces and microcracks with high spatial resolution.
• Purchasing/project management: Commissioning of specialised analyses for complex failure or development questions.
• Science: Preparation of TEM samples, 3D reconstructions and nanoscale microstructure analyses.
• Insurance/law: Microscopic preservation of evidence in materials-related disputes.

Typical testing or verification methods: FIB cross-section analysis, TEM lamella preparation, 3D FIB tomography, combination with EDX or EBSD.

FAQ:

• What is a FIB system used for?
• For high-precision sample preparation, local microstructure analysis and investigation of nanoscale defects.